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Predictive factors for hyperglycaemic progression in patients with schizophrenia or bipolar disorder
- Ichiro Kusumi, Yuki Arai, Ryo Okubo, Minoru Honda, Yasuhiro Matsuda, Yukihiko Matsuda, Akihiko Tochigi, Yoshiteru Takekita, Hiroyoshi Yamanaka, Keiichi Uemura, Koichi Ito, Kiyoshi Tsuchiya, Jun Yamada, Bunta Yoshimura, Nobuyuki Mitsui, Sigehiro Matsubara, Takayuki Segawa, Nobuyuki Nishi, Yasufumi Sugawara, Yuki Kako, Ikuta Shinkawa, Kaoru Shinohara, Akiko Konishi, Junichi Iga, Naoki Hashimoto, Shinsaku Inomata, Noriko Tsukamoto, Hiroto Ito, Yoichi M. Ito, Norihiro Sato
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- Journal:
- BJPsych Open / Volume 4 / Issue 6 / November 2018
- Published online by Cambridge University Press:
- 30 October 2018, pp. 454-460
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- Article
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Background
Patients with schizophrenia or bipolar disorder have a high risk of developing type 2 diabetes.
AimsTo identify predictive factors for hyperglycaemic progression in individuals with schizophrenia or bipolar disorder and to determine whether hyperglycaemic progression rates differ among antipsychotics in regular clinical practice.
MethodWe recruited 1166 patients who initially had normal or prediabetic glucose levels for a nationwide, multisite, l-year prospective cohort study to determine predictive factors for hyperglycaemic progression. We also examined whether hyperglycaemic progression varied among patients receiving monotherapy with the six most frequently used antipsychotics.
ResultsHigh baseline serum triglycerides and coexisting hypertension significantly predicted hyperglycaemic progression. The six most frequently used antipsychotics did not significantly differ in their associated hyperglycaemic progression rates over the 1-year observation period.
ConclusionsClinicians should carefully evaluate baseline serum triglycerides and coexisting hypertension and perform strict longitudinal monitoring irrespective of the antipsychotic used.
Declaration of interestThe authors report no financial or other relationship that is relevant to the subject of this article. Relevant financial activities outside the submitted work are as follows. I.K. has received honoraria from Astellas, Chugai Pharmaceutical, Daiichi Sankyo, Dainippon Sumitomo Pharma, Eisai, Eli Lilly, Janssen Pharmaceutical, Kyowa Hakko Kirin, Meiji Seika Pharma, MSD, Nippon Chemiphar, Novartis Pharma, Ono Pharmaceutical, Otsuka Pharmaceutical, Pfizer, Tanabe Mitsubishi Pharma, Shionogi and Yoshitomiyakuhin; has received research/grant support from AbbVie GK, Asahi Kasei Pharma, Astellas, Boehringer Ingelheim, Chugai Pharmaceutical, Daiichi Sankyo, Dainippon Sumitomo Pharma, Eisai, Eli Lilly, GlaxoSmithKline, Kyowa Hakko Kirin, Meiji Seika Pharma, MSD, Novartis Pharma, Ono Pharmaceutical, Otsuka Pharmaceutical, Pfizer, Takeda Pharmaceutical, Tanabe Mitsubishi Pharma, Shionogi and Yoshitomiyakuhin; and is a member of the advisory boards of Dainippon Sumitomo Pharma and Tanabe Mitsubishi Pharma. Y.T. has received speaker's honoraria from Dainippon-Sumitomo Pharma, Otsuka, Meiji-Seika Pharma, Janssen Pharmaceutical, Daiichi-Sankyo Company, UCB Japan and Ono Pharmaceutical. K.U. has received honoraria from Dainippon Sumitomo Pharma, Eisai, Eli Lilly, Janssen Pharmaceutical, Kyowa Hakko Kirin, Meiji Seika Pharma, MSD, Takeda Pharmaceutical, Hisamitsu Pharmaceutical, Otsuka Pharmaceutical, Pfizer, Tanabe Mitsubishi Pharma, Shionogi and Yoshitomiyakuhin. B.Y. has received speaker's honoraria from Otsuka Pharmaceutical and Janssen Pharmaceutical. J. I. has received honoraria from Dainippon Sumitomo Pharma, Eli Lilly, Janssen Pharmaceutical, Meiji Seika Pharma, MSD, Novartis Pharma, Otsuka Pharmaceutical and Mochida Pharma.
Charge Storage Mechanism in Nano-Crystalline Si Based Single-Electron Memories
- Bruce J. Hinds, Takayuki Yamanaka, Shunri Oda
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- Journal:
- MRS Online Proceedings Library Archive / Volume 638 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, F2.2.1
- Print publication:
- 2000
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A memory device sensitive to a single electron stored in a nanocrystalline Si dot has been synthesized allowing for the study of charge retention lifetime. A 50 nm by 20 nm transistor channel is synthesized by E-beam lithography followed by reactive ion etching of thin (20nm) Silicon-on-Insulator (SOI) channel. This small area of the narrow channel allows for the isolation of a single nano-crystalline Si dot and elimination of channel percolation paths around the screening charge. Remote Plasma Enhanced CVD is used to form 6±2nm diameter nc-Si dots in the gas phase from a pulsed SiH4 source. Electrons stored in a dot results in an observed discrete threshold shift of 90 mV. Analysis of lifetime as a function of applied potential and temperature show the dot to be an acceptor site with nearly Poisson lifetime distributions. An observed 1/T2 dependence of lifetime is consistent with a direct tunneling process, thus interface states are not the dominant mechanism for electron storage in this device structure. Median lifetimes are modeled by a direct tunneling process, which is influenced by gate bias and dot size.